New ultra-thin electrode material: step c

image: Results of the operation of the two-dimensional semiconductor device and the logic device implemented by the joint research team
view More ▼

Credit: Korean Institute of Science and Technology (KIST)

In order to implement artificial intelligence systems and autonomous driving systems, which are often seen in movies, in everyday life, processors that function like the brains of computers must be able to process more data. However, silicon-based logic devices, which are key components of computer processors, have limitations in that the costs of processing and energy consumption increase with the advancement of miniaturization and integration.

To overcome these limitations, research is being conducted on electronic and logic devices based on very thin two-dimensional semiconductors at the atomic layer level. However, it is more difficult to control electrical properties by alloying in two-dimensional semiconductors than in conventional silicon-based semiconductor devices. Thus, it was technically difficult to implement various logic devices with two-dimensional semiconductors.

The Korean Institute of Science and Technology (KIST; President: Seok-jin Yoon) announced that a joint research team led by Dr. Do Kyung Hwang of the Center for Optoelectronic Materials and Devices and Professor Kimoon Lee of the Department of Physics at the National Kunsan University (President: Zhang-ho Lee) has succeeded in implementing two-dimensional semiconductor electronic and logic devices whose electrical properties can be freely controlled by developing a new ultra-thin electrode material (Cl-SnSe2).

The joint research team was able to selectively control the electrical properties of semiconductor electronic devices using Cl-alloyed tin diselenide (Cl-SnSe2), a two-dimensional electrode material. It was difficult to implement additional logic circuits with conventional two-dimensional semiconductor devices, as they only show the characteristics of N-type or P-type devices due to the Fermi-level mounting phenomenon. In contrast, if the electrode material developed by the joint research team is used, it is possible to freely control the characteristics of N-type and P-type devices by minimizing defects with the semiconductor interface. In other words, a device performs the functions of both N-type and P-type devices. Therefore, it is not necessary to manufacture N-type and P-type devices separately. By using this device, the joint research team has successfully implemented a high-performance, low-power, complementary logic circuit that can perform various logic operations such as NOR and NAND.

Dr Huang said that “this development will help accelerate the commercialization of next-generation systems technologies such as artificial intelligence systems, which have been difficult to use in practical applications due to technical constraints caused by miniaturization and the high integration of conventional silicon.” semiconductor devices. “He also predicted that” the developed two-dimensional electrode material is very thin; therefore, they show high light transmittance and flexibility. Therefore, they can be used for the next generation of flexible and transparent semiconductor devices. “

###

KIST was established in 1966 as the first government-funded research institute in Korea to create a national development strategy based on science and technology and disseminate a variety of industrial technologies to promote the development of key industries. KIST is now raising the status of Korean science and technology by pursuing the world’s leading innovative research and development. For more information, please visit the KIST website at https://eng.kist.re.kr/kist_eng_renew/

This study was supported by the KIST institutional program, the Nanomaterials Technology Development Project and the Information and Communication Technology Development Project funded by the Ministry of Science and ICT (Minister He-souk Lim). The results of the study were published in the international academic journal Advanced Materials (IF: 30,849).


Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news reports published in EurekAlert! through contributing institutions or for the use of any information through the EurekAlert system.

Leave a Comment

Your email address will not be published.